HIGH-FREQUENCY CIRCUIT DESIGN
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- Versione italiana
- Academic year
- 2022/2023
- Teacher
- ANTONIO RAFFO
- Credits
- 6
- Curriculum
- Components & circuits design
- Didactic period
- Secondo Semestre
- SSD
- ING-INF/01
Training objectives
- The course aims at providing the basic concepts of RF and microwave electronics. In particular, starting from the description and characterization of high-frequency active and passive devices, the student will tackle the different facets of circuit design at microwave frequencies.
Main acquired knowledge:
The working principles of the most important active and passive devices operating at microwave frequencies.
High-frequency linear and nonlinear measurement techniques.
Power amplifier design.
Main acquired skills:
To make a reasoned choice of suitable semiconductor technology (e.g., material, foundry process) for a particular application.
To successfully examine the main limitations related to semiconductor devices occurring in high-frequency linear and nonlinear electronic circuits and systems.
To characterize microwave devices\circuits\systems under linear and nonlinear operation.
To approach the design of a microwave circuit. Prerequisites
- The following concepts are mandatory:
Basic concepts of probability theory.
Basic concepts of the physics, especially those related to electromagnetics.
Basic concepts of digital and analogue electronics. Course programme
- 60 hours of teaching are given, divided in lectures (45 hours) and CAD laboratory sessions (15 hours).
Introduction (2.5 hours)
Microwave Transistors (HBTs, MESFETs, and HEMTs) (12.5 hours)
(Low- and) High-Frequency Measurement Techniques (10 hours)
Microwave Transistor Modelling Techniques (10 hours)
Microwave Amplifiers (10 hours)
Laboratory Sessions (15 hours) Didactic methods
- The course is organized as follows:
- pre-recorded lectures on all subjects of the course;
- classroom focus group related to the theoretical topics;
- laboratory sessions oriented to the design of a microwave power amplifier. Learning assessment procedures
- The examination, which can be carried out in English, is structured in two sessions: an oral session and a laboratory session focusing on the topics presented during the course. The aim is to verify the ability of linking different subjects of the programme as well as the ability of repeating specific topics tackled in the course.
The two parts cannot be taken separately and they must be both sufficient. They contribute equally to the final score. To pass the exam, the student should obtain a minimum score of 18 over 30.
During the examination it is not allowed consulting any textbook or document.
Passing the final exam is the proof that knowledge and abilities outlined in the training objectives of the course have been achieved. Reference texts
- Teacher’s handouts
Specific topics can be further developed in the following texts:
R. S. Muller, T. I. Kamins, M. Chan, "Device Electronics for Integrated Circuits", Wiley, 2003.
S. M. Sze, M.-K. Lee, “Semiconductor Devices: Physics and Technology”, Wiley, 2013.
D. M. Pozar, “Microwave Engineering”, Wiley, 2011.
G. Ghione, M. Pirola, ”Microwave Electronics”, Cambridge University Press, 2017.
J. M. Golio, “Microwave MESFETs and HEMTs”, Artech House Publishers, 1991.
G. Gonzalez, “Microwave Transistor Amplifiers”, Prentice Hall, 1997.
P. Colantonio, F. Giannini, E. Limiti, “High Efficiency RF and Microwave Solid State Power Amplifiers”, Wiley, 2009.
V. Teppati, A. Ferrero, M. Sayed, “Modern RF and Microwave Measurement Techniques”, Cambridge University Press, 2013.
A. Raffo, G. Crupi, “Microwave Wireless Communications”, Academic Press (Elsevier), 2016.
