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R2RAM

Radiation Hard Resistive Random-Access Memory

 

Logo r2ram

 

 

 

 

Project details:

Call: H2020-COMPET-2014

Start date 1/01/2015 - end date 31/12/2016

EU contribution: 1.039.362 €

EU contribution to UniFe: 99.000 €

 

Abstract:

The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles. The switching effect of RRAM devicesis caused by chemical Redox-reactions, therefore, radiation effects like total ionizing dose and single event effects don't affect the switching mechanism. Semiconductor memories, among rad hard integrated circuit scenario, are one of the most critical topics for space applications. Actually both volatile and nonvolatile memories, excluding few exceptions, are integrated using standard processes and standard architectures. This means that the final device is typically at least Rad tolerant and not Rad Hard and failure during mission is avoided using Error Correcting Code techniques including redundancy at the board level. The basic goal of the project is to give a methodology for the development of a new rad-hard nonvolatile RRAM memory with high-performance features like good retention, re-programmability and cycling, and realize a prototype (1Mbit RRAM memory) in order to validat the approach.

 

Participant:

  • IHP - Innovations for High Performance Microelectronics/Leibniz-Institut fuer Innovative Mikroelektronik, Coordinator (Germany)
  • Consorzio Nazionale Interuniversitario per la Nanoelettronica (Italy)
  • Redcat Devices srl (Italy)
  • University of Jyvaskyla (Finland)